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| 2SC1383L/2SC1384L Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free 4.90.2 NPN Silicon General Purpose Transistor TO-92L 3.90.2 FEATURE Power dissipation 2.0 +0.3 -0.2 140.2 0.45 +0.1 -0.1 (1.27 Typ.) 1.4 +0.R2 -0.2 0.40 +0.05 -0.05 8.00.2 PCM: Collector current ICM: 1 W (Tamb=25) 1A 1.00.1 Collector-base voltage V(BR)CBO: 2SC1383L: 30 V 2SC1384L: 60 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 123 2.540.1 1: Emitter 2: Collector 3: Base Unit: mm ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage 2SC1383L 2SC1384L Collector-emitter breakdown voltage 2SC1383L 2SC1384L Emitter-base breakdown voltage Collector cut-off current unless Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE(1) otherwise Test specified) MIN 30 60 25 50 5 0.1 85 50 0.4 1.2 100 V V MHz 340 MAX UNIT V V V A conditions Ic= 10A , IE=0 IC=2mA , IB=0 IE= 10A, IC=0 VCB=20V , VCE=10 V, VCE=5 V, IE=0 IC= 500mA IC= 1A DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat) IC= 500m A, IB=50mA IC= 500mA , IB= 50mA fT VCE= 10 V, IC= 50mA CLASSIFICATION OF hFE(1) Rank Range Q 85-170 R 120-240 S 170-340 http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 3 2SC1383L/2SC1384L Elektronische Bauelemente NPN Silicon General Purpose Transistor PC Ta 1.2 1.50 IC VCE Ta = 25C IB = 10 mA 9 mA 8 mA 7 mA 6 mA 5 mA 4 mA 0.50 IC I B 1.2 VCE = 10 V Ta = 25C 1.0 Collector power dissipation PC (W) 1.0 1.25 Collector current IC (A) 0.8 1.00 Collector current IC (A) 0.8 0.6 0.75 0.6 0.4 3 mA 2 mA 0.4 0.2 0.25 1 mA 0.2 0 0 0 40 80 120 160 0 2 4 6 8 10 0 0 2 4 6 8 10 12 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) Base current IB (mA) VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) 10 VBE(sat) IC 100 hFE IC 600 VCE = 10 V Base-emitter saturation voltage VBE(sat) (V) IC / IB = 10 IC / IB = 10 1 Ta = 75C 25C 10 Forward current transfer ratio hFE 500 400 0.1 -25C 25C 1 Ta = -25C 75C 300 Ta = 75C 200 25C -25C 0.01 0.1 100 0.001 0.01 0.1 1 10 0.01 0.01 0.1 1 10 0 0.01 0.1 1 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) fT I E 200 V = 10 V CB Ta = 25C 50 Cob VCB 120 VCER RBE Collector-emitter voltage (V) (Resistor between B and E) VCER IE = 0 f = 1 MHz Ta = 25C Collector output capacitance C ob (pF) (Common base circuited) IC = 10 mA Ta = 25C 100 Transition frequency fT (MHz) 160 40 80 120 30 60 2SC1384 40 2SC1383 20 80 20 40 10 0 -1 -10 -100 0 1 10 100 0 0.1 1 10 100 Emitter current IE (mA) Collector-base voltage VCB (V) Base-emitter resistance RBE (k) http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 3 2SC1383L/2SC1384L Elektronische Bauelemente NPN Silicon General Purpose Transistor ICEO Ta 104 VCE = 10 V 10 Safe operation area Single pulse Ta = 25C ICP Collector current IC (A) 103 1 IC t=1s ICEO (Ta) ICEO (Ta = 25C) t = 10 ms 102 0.1 2SC1383 1 10 10 0.01 1 0 40 80 120 160 0.001 0.1 2SC1384 100 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 3 of 3 |
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